{"identifier":"nobleid:/w1/20260521/ADE82F73","arkIdentifier":"ark:/48914/w1/20260521/ADE82F73","version":1,"workTitle":"Electrical properties of S+-implanted GaAs annealed by covering with As-doped a-Si:H films","workType":"Journal Article","authors":"Masanori Sakaguchi, Katsuhiro Yokota, Akira Shiomi, Haruya Mori Haruya Mori, Makoto Watanabe, Toshinori Takagi, Kiyohito Hirai, Hiromichi Takano, Masao Kumagai","description":null,"workUrl":null,"existingDoi":"10.1016/b978-0-444-82334-2.50174-x","createdAt":"2026-05-21T15:57:28.274455Z","canonicalUrl":"https://nobleid.org/ark:/48914/w1/20260521/ADE82F73.v1"}