{"identifier":"nobleid:/w1/20260521/AF8DF5F6","arkIdentifier":"ark:/48914/w1/20260521/AF8DF5F6","version":1,"workTitle":"Characteristics of silicon nitride deposited by VHF (162 MHz)-plasma enhanced chemical vapor deposition using a multi-tile push–pull plasma source","workType":"Journal Article","authors":"Ki Seok Kim, Nishant Sirse, Ki Hyun Kim, A. R. Ellingboe, Kyong Nam Kim, Geun Young Yeom","description":null,"workUrl":null,"existingDoi":"10.1088/0022-3727/49/39/395201","createdAt":"2026-05-21T17:44:32.742552Z","canonicalUrl":"https://nobleid.org/ark:/48914/w1/20260521/AF8DF5F6.v1"}