{"identifier":"nobleid:/w1/20260521/BA8366EB","arkIdentifier":"ark:/48914/w1/20260521/BA8366EB","version":1,"workTitle":"Physical Analysis of Gate-Source Voltage Dependencies of Parasitic Capacitors, and Their Impacts on Switching Behavior of a Discrete Silicon-Carbide MOSFET","workType":"Journal Article","authors":"Yasushige Mukunok, Takeshi Horiguchi, Hiroshi Nakatake, Masaki Kuzumoto, Makoto Hagiwara, Hirofumi Akagi","description":null,"workUrl":null,"existingDoi":"10.23919/icpe2019-ecceasia42246.2019.8797004","createdAt":"2026-05-21T13:44:53.395649Z","canonicalUrl":"https://nobleid.org/ark:/48914/w1/20260521/BA8366EB.v1"}