{"identifier":"nobleid:/w1/20260521/DF4097CE","arkIdentifier":"ark:/48914/w1/20260521/DF4097CE","version":1,"workTitle":"SiC epitaxial growth on Si(001) substrates using a BP buffer layer","workType":"Journal Article","authors":"Yoshihisa Abe, Jun Komiyama, Syunichi Suzuki, Hideo Nakanishi","description":null,"workUrl":null,"existingDoi":"10.1016/j.jcrysgro.2005.05.047","createdAt":"2026-05-21T22:36:21.547783Z","canonicalUrl":"https://nobleid.org/ark:/48914/w1/20260521/DF4097CE.v1"}