{"identifier":"nobleid:/w1/20260521/DFDA48D2","arkIdentifier":"ark:/48914/w1/20260521/DFDA48D2","version":1,"workTitle":"Analysis of the Biasing Conditions and Latching Operation for Si/SiGe Resonant Interband Tunnel Diode Based Tunneling SRAM","workType":"Journal Article","authors":"S. Sudirgo, D. Pawlik, S.L. Rommel, Santosh Kurinec, Philip E. Thompson, Paul R. Berger","description":null,"workUrl":null,"existingDoi":"10.1109/isdrs.2005.1596122","createdAt":"2026-05-21T21:14:38.662363Z","canonicalUrl":"https://nobleid.org/ark:/48914/w1/20260521/DFDA48D2.v1"}