{"identifier":"nobleid:/w1/20260521/F5ABCB6E","arkIdentifier":"ark:/48914/w1/20260521/F5ABCB6E","version":1,"workTitle":"An innovative TPV device design based on narrow gap IV-VI semiconductor MQW structures","workType":"Journal Article","authors":"M. Khodr, Manisha Chakraburtty, Patrick J. McCann","description":null,"workUrl":null,"existingDoi":"10.1117/12.2526919","createdAt":"2026-05-21T18:00:22.832145Z","canonicalUrl":"https://nobleid.org/ark:/48914/w1/20260521/F5ABCB6E.v1"}