{"identifier":"nobleid:/w1/20260523/154CBC62","arkIdentifier":"ark:/48914/w1/20260523/154CBC62","version":1,"workTitle":"Annealing effect on the electrical activity of extended defects in plastically deformed p‐Si with low dislocation density","workType":"Journal Article","authors":"O. V. Feklisova, B. Pichaud, E. B. Yakimov","description":null,"workUrl":null,"createdAt":"2026-05-23T12:57:41.784344Z","canonicalUrl":"https://nobleid.org/ark:/48914/w1/20260523/154CBC62.v1"}