{"identifier":"nobleid:/w1/20260525/98AC2CB3","arkIdentifier":"ark:/48914/w1/20260525/98AC2CB3","version":1,"workTitle":"Efficiency analysis and electronic structures of 3C-SiC and 6H-SiC with 3d elements impurities as intermediate band photovoltaics","workType":"Journal Article","authors":"Hamid Heidarzadeh, Ali Rostami, Mahboubeh Dolatyari, Ghasem Rostami","description":null,"workUrl":null,"existingDoi":"10.1117/1.jpe.4.042098","createdAt":"2026-05-25T22:02:17.179057Z","canonicalUrl":"https://nobleid.org/ark:/48914/w1/20260525/98AC2CB3.v1"}