v1
Uniform, high-gain AlGaAs/In/sub 0.05/Ga/sub 0.95/As/GaAs P-n-p heterojunction bipolar transistors by dual selective etch process
Identifier:nobleid.org/w1/20260515/CE2ABCC0
Type:Journal Article
0 views
Embeddable Badge
[](https://nobleid.org/work/w1/20260515/CE2ABCC0)
Bibliometric Analysis
Impact metrics, research fronts, co-authorship networks →
Authors & Claims