Direct observation of resistive switching memories behavior from nc-Si embedded in SiO2 at room temperature

Guoyin Xia; Zhongyuan Ma; Xiaofan Jiang; Huafeng Yang; Jun Xu; Ling Xu; Wei Li; Kunji Chen; Duan Feng

doi:10.1016/j.jnoncrysol.2012.01.065

Direct observation of resistive switching memories behavior from nc-Si embedded in SiO2 at room temperature

Identifier:nobleid.org/w1/20260515/6FF2102C

Type:Journal Article

0 views

Support unavailableClaim Your Authorship

View Original Paper Source

Embeddable Badge

[![NobleID](https://www.nobleid.org/api/badge/6FF2102C.svg?ark=w1%2F20260515%2F6FF2102C)](https://nobleid.org/work/w1/20260515/6FF2102C)

ARK Inflections

Metadata Policy

Metadata Formats

Bibliometric Analysis

Impact metrics, research fronts, co-authorship networks →

Authors & Claims

Paper Authors

Claim authorship of this work

Direct observation of resistive switching memories behavior from nc-Si embedded in SiO2 at room temperature

Identifier:nobleid.org/w1/20260515/6FF2102C

Type:Journal Article

0 views

Support unavailableClaim Your Authorship

View Original Paper Source

Embeddable Badge

[![NobleID](https://www.nobleid.org/api/badge/6FF2102C.svg?ark=w1%2F20260515%2F6FF2102C)](https://nobleid.org/work/w1/20260515/6FF2102C)

ARK Inflections

Metadata Policy

Metadata Formats

Bibliometric Analysis

Impact metrics, research fronts, co-authorship networks →

Authors & Claims

Paper Authors

Claim authorship of this work