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High performance X-band power amplifier MMIC using a 0.25 ㎛ GaN HEMT technology

Identifier:nobleid.org/w1/20260515/BBAFE072

Type:Journal Article

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Byung‐Jun Park

Sung‐Chan Kim

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High performance X-band power amplifier MMIC using a 0.25 ㎛ GaN HEMT technology | NobleID