Tunable charge-trap memory based on few-layer MoS2. | NobleID

Main

Mint Work Search Explore Works Knowledge Graph Citation Graph Bibliometrics Receipts

v1

Tunable charge-trap memory based on few-layer MoS2.

Identifier:nobleid.org/w1/20260517/965DFBA3

Type:Journal Article

0 views

Support unavailableClaim Your Authorship

View Original Paper Source

Embeddable Badge

[![NobleID](https://www.nobleid.org/api/badge/965DFBA3.svg?ark=w1%2F20260517%2F965DFBA3)](https://nobleid.org/work/w1/20260517/965DFBA3)

ARK Inflections

Metadata Policy

Metadata Formats

Bibliometric Analysis

Impact metrics, research fronts, co-authorship networks →

Authors & Claims

Paper Authors

David Wei Zhang

Claim authorship of this work

info@nobleid.org

About FAQ Terms Policy Persistence & Resolver Service Policy